DMT8008LPS-13

$0.33

Description：MOSFET N-CH 80V 83A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c2fa58e7402c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 83A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：41.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2345 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT8008LPS-13

Overview

The DMT8008LPS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 80 V and a gate-source voltage (VGSS) rating of ±20 V. The device provides a continuous drain current (ID) of 83 A at TC = +25°C, with a static drain-source on-resistance (RDS(ON)) of 7.8 mΩ at VGS = 10 V and 11 mΩ at VGS = 4.5 V. Total gate charge (Qg) is 41.2 nC at VGS = 10 V. Operating temperature range spans from -55 °C to +150 °C.

Feature Summary

Designed to minimize RDS(ON) while maintaining superior switching performance for high-conversion efficiency.
Features 100% Unclamped Inductive Switching (UIS) testing in production to ensure robust end-application reliability.
Constructed with lead-free finish, RoHS compliant materials, and halogen and antimony free "Green" compound.

Applications

DC-DC converters
Load switches
Power management circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component meets all applicable regulatory standards required for your target market. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.

Selection Notes

Select this component when an 80 V N-channel MOSFET with low on-resistance is required for power management applications. Evaluate thermal resistance characteristics based on the specific PCB layout and cooling conditions. Consider the UIS capability if the application involves inductive load switching.

Part Context

This part belongs to the DMTH/DMT series of surface-mount MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which offers a compact footprint suitable for space-constrained designs. The series focuses on balancing low conduction losses with fast switching speeds.

Replacement Considerations

Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Do not assume pin compatibility or electrical equivalence with other 80 V N-channel MOSFETs without direct cross-reference data.