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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMT8008SK3-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) package. It features a drain-source voltage of 80V and a continuous drain current of 90A at 25°C case temperature. The device offers a maximum on-resistance of 7.8mΩ at VGS=10V and 11mΩ at VGS=6V. Total gate charge is 34nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Features low on-resistance to minimize power losses during conduction.
- Designed with low gate charge to reduce switching losses for high efficiency.
- Includes 100% unclamped inductive switching (UIS) testing in production for robustness.
Applications
- Power management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring an 80V N-channel MOSFET with high current handling capabilities up to 90A. Ensure the thermal design accommodates the specified thermal resistance values for both ambient and case-mounted scenarios. Verify that the gate drive voltage aligns with the optimal RDS(on) performance characteristics provided in the datasheet.
Part Context
This part belongs to the DMT series of power MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in a surface-mount TO252 form factor. The device is intended for general-purpose power switching applications where efficiency and reliability are critical requirements.
Replacement Considerations
Consult official cross-reference lists or contact Diodes Incorporated directly for verified equivalent parts. Do not substitute based solely on matching electrical parameters without confirming pinout compatibility and thermal performance specifications.
FAQ
What is the maximum pulsed drain current for the DMT8008SK3?
The maximum pulsed drain current is 360A, measured with a 10μs pulse duration and a 1% duty cycle.
Is the DMT8008SK3 suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, or manufacturing in IATF 16949 certified facilities, you must contact Diodes Incorporated or your local representative directly.
