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Product Detailed Parameters
- Description：MOSFET N-CH 80V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.2W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMT8012LFG-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 35 A at TC = +25°C. The maximum on-state resistance (RDS(ON)) is 16 mΩ at VGS = 10V with ID = 12A, and 22 mΩ at VGS = 6V with ID = 6A. Total gate charge (Qg) is 34 nC at VGS = 10V. The device operates within a junction temperature range of -55°C to +150°C and is housed in a POWERDI3333-8 package.
Feature Summary
- Low RDS(ON) minimizes on-state power losses
- Excellent Qgd x RDS(ON) figure of merit for switching efficiency
- Advanced technology optimized for DC/DC converter applications
- Small form factor thermally efficient package enables higher density end products
Applications
- Synchronous Rectifier
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' against official documentation to confirm the tape and reel quantity of 3,000 units. Ensure that the component meets all required environmental standards, including RoHS compliance and AEC-Q101 qualification, before finalizing procurement specifications.
Selection Notes
Select this component when high efficiency and low conduction losses are critical in compact designs. The small footprint occupies significantly less board area than SO-8 packages. Evaluate thermal management requirements based on the specified thermal resistance values for your specific application environment.
Part Context
This part belongs to the DMT8012LFG series from Diodes Incorporated. It utilizes the POWERDI3333-8 case configuration, which provides a compact surface-mount solution. The device is designed to balance low on-resistance with superior switching performance for modern power management systems.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Do not assume cross-compatibility with other N-channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics.
