DMT8012LFG-7

$0.78

Description：MOSFET N-CH 80V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:968b4bcc378e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.2W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMT8012LFG-7

Overview

The DMT8012LFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an 80V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 35A at case temperatures of +25°C, with a static drain-source on-resistance of 16mΩ at VGS=10V and 22mΩ at VGS=6V. Packaged in the POWERDI3333-8 surface-mount format, it includes a total gate charge of 34nC at VGS=10V.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability applications.
Totally lead-free, fully RoHS compliant, and halogen and antimony free green device.

Applications

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the required packaging quantity matches the standard tape and reel specifications provided in the datasheet. Ensure compliance with environmental directives such as RoHS and REACH requirements relevant to your manufacturing region. Cross-reference the component marking code SG8 YYWW to validate authenticity upon receipt.

Selection Notes

Select this component when designing circuits requiring an 80V rating with low conduction losses in a compact footprint. Evaluate the thermal resistance characteristics relative to your PCB copper layout, as junction-to-ambient resistance depends heavily on board design. Consider the gate threshold voltage variations across temperature ranges to ensure reliable switching under your specific drive conditions.

Part Context

This part belongs to the DMT8012LFG series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the POWERDI3333-8 package, which is engineered for high thermal efficiency and small board area occupation. The series is targeted at applications demanding high-density power management solutions with robust switching capabilities.

Replacement Considerations

Consult official substitution lists or contact the manufacturer directly for verified equivalent parts. Do not assume compatibility based solely on pinout or voltage ratings without reviewing detailed electrical parameters and thermal characteristics.