DMT8012LPS-13

$0.34

Description：MOSFET N-CH 80V 9A/65A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:437aac8404bf Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 9A/65A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 113W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMT8012LPS-13

Overview

The DMT8012LPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 80V and a maximum gate-source voltage (VGSS) of ±20V. The device exhibits a static drain-source on-resistance (RDS(ON)) of 17mΩ at VGS=10V and 21mΩ at VGS=4.5V. Continuous drain current (ID) reaches 65A at TC=+25°C with VGS=10V. Total gate charge (Qg) is 34nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

High conversion efficiency achieved through minimized on-state resistance and superior switching performance.
Low input capacitance and fast switching speed designed for high-efficiency power management applications.
Package profile under 1.1mm, making it suitable for thin electronic designs.
Qualified to AEC-Q101 standards for high reliability.

Applications

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free. Ensure the application environment does not exceed the specified thermal limits or junction temperatures defined in the datasheet.

Selection Notes

Select this component when an 80V N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The PowerDI5060-8 package provides a compact footprint with a height under 1.1mm. Consider the 65A continuous drain current capability at case temperature for high-power density requirements.

Part Context

This part belongs to the DMT8012LPS series manufactured by Diodes Incorporated. It utilizes silicon technology and is classified as a single-channel enhancement mode MOSFET. The product is marked with 'T8012LS' and includes date code markings for traceability.

Replacement Considerations

Direct substitutes within the same family include DMT8012LPS without the suffix, though packaging may differ. Verify pinout compatibility and electrical parameters against alternative N-channel MOSFETs before implementation.