DMT8012LSS-13

$0.94

Description：MOSFET N-CH 80V 9.7A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:707c71fdb62a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 9.7A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMT8012LSS-13

Overview

The DMT8012LSS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 80 V and a maximum continuous drain current (I_D) of 9.7 A at +25°C. The device offers a low on-resistance (R_DS(ON)) of 16.5 mΩ at V_GS = 10 V and 20 mΩ at V_GS = 4.5 V. Packaged in an SO-8 case, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

High conversion efficiency with minimized on-state losses
Fast switching speed and low input capacitance
Qualified to AEC-Q101 standards for high reliability
Totally lead-free and fully RoHS compliant

Applications

Notebook battery power management
Load switches
Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the component matches the exact part number DMT8012LSS-13 and confirms the SO-8 package type. Ensure compliance requirements such as RoHS and AEC-Q101 qualification align with project specifications. Confirm that the datasheet revision and manufacturing date code meet your supply chain standards before finalizing procurement.

Selection Notes

Select this component when an 80 V N-channel MOSFET with low R_DS(ON) is required for efficient power management. Consider the SO-8 package constraints and thermal resistance values for heat dissipation. Evaluate gate charge and switching speeds against circuit requirements to ensure optimal performance in DC-DC converters or load switch applications.

Part Context

This part belongs to Diodes Incorporated's N-channel enhancement mode MOSFET lineup. It is designed to minimize on-resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a standard SO-8 plastic package suitable for surface mount applications.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying electrical parameters and pin configurations.