DMTH10H009LFG-7

$1.62

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cf4cb5b32b8a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2361 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH10H009LFG-7

Overview

The DMTH10H009LFG-7 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an RDS(ON) of 8.5mΩ at VGS=10V and 12.5mΩ at VGS=4.5V, supporting continuous drain currents up to 55A at TC=+25°C. The device utilizes the PowerDI3333-8 surface-mount package, providing a thermal resistance (RθJC) of 3.8°C/W. Electrical characteristics include a gate threshold voltage of 1.1V to 2.5V, total gate charge of 41nC, and operation across a temperature range of -55°C to +175°C.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products and occupies significantly less board area than traditional SO-8 packages.
Manufactured with lead-free finish and complies with RoHS directives; halogen- and antimony-free green device construction.

Applications

Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The standard tape and reel configuration typically contains 2,000 units per reel. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors before finalizing procurement specifications.

Selection Notes

Select this component when low conduction losses are critical in compact designs. Evaluate the trade-off between the low RDS(ON) and the required gate drive voltage levels. Ensure the PCB layout accommodates the PowerDI3333-8 footprint and provides adequate copper area for thermal dissipation to maintain junction temperatures within the specified operating range.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered for applications requiring robust switching capabilities and minimal power loss. The device integrates advanced silicon technology into a highly compact surface-mount package suitable for modern electronic systems.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the host circuitry.