DMTH10H009LFGQ-7

$0.45

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:eb1f911825cb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2361 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 39W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH10H009LFGQ-7

Overview

The DMTH10H009LFGQ-7 is a 100V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source on-resistance of 8.5mΩ at VGS=10V and 13.6mΩ at VGS=4.5V. Continuous drain current reaches 46A at TC=+25°C, with a total power dissipation of 2.5W at TA=+25°C. The device supports an operating junction temperature up to +175°C and includes thermal resistance values of 60°C/W (junction-to-ambient) and 3.8°C/W (junction-to-case).

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Features low RDS(ON) to minimize on-state losses and optimize efficiency.
Includes 100% unclamped inductive switching (UIS) testing for robustness.
Utilizes a thermally efficient PowerDI3333-8 package to reduce board area.

Applications

Synchronous rectifiers
Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP requirements, before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high-density layouts due to its compact form factor. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance. Evaluate thermal management strategies based on the provided junction-to-ambient and junction-to-case resistance values.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for automotive environments, offering enhanced reliability through rigorous manufacturing controls in IATF 16949 certified facilities. The device represents an advancement in silicon technology for power switching applications.