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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A TO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4468 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 187W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMTH10H010SCT is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a static drain-source on-resistance of 9.5mΩ at VGS=10V. The device supports a continuous drain current of 100A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-220AB case, it offers a total power dissipation of 187W when mounted directly to the case.
Feature Summary
- Low input capacitance for fast switching performance
- High BVDSS rating suitable for demanding power applications
- Low input and output leakage currents
- Lead-free finish with RoHS compliance
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix 'SCT' corresponds to the tube packaging configuration containing 50 pieces per tube. Confirm that the component meets the required environmental standards, including RoHS 3 compliance and halogen/antimony-free specifications as defined by the manufacturer's green product guidelines.
Selection Notes
Select this component for high-efficiency power management designs requiring robust thermal handling capabilities. The TO-220AB package facilitates direct heatsinking, supporting high continuous current ratings. Ensure gate drive voltages align with the specified threshold characteristics to optimize conduction losses and switching speeds effectively.
Part Context
This part belongs to the DMTH10 series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for surface mount or through-hole integration depending on the specific package variant selected within the broader family lineup.
Replacement Considerations
Consult official datasheets for equivalent parts such as DMT10H020SDGQ-13 or DMTH10H010SPS-13. Verify pinout compatibility and electrical parameter alignment before substitution.
FAQ
What is the maximum pulsed drain current capability?
The device supports a pulsed drain current of 400A with a 10μs pulse duration and a duty cycle of 1%.
Is the component suitable for automotive environments?
The documentation confirms RoHS 3 compliance and halogen-free status but does not explicitly state AEC-Q101 qualification for this specific part number.
