DMTH10H010SPSWQ-13

$0.57

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5ea283396dfb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4468 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 166W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H010SPSWQ-13

Overview

The DMTH10H010SPSWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (BVDSS) of 100V and a maximum continuous drain current of 100A at TC = +25°C. The device offers a low on-resistance (RDS(ON)) of 8.8mΩ at VGS = 10V and 11.5mΩ at VGS = 6V. It supports an operating temperature range from -55°C to +175°C and includes a total gate charge of 56.4nC.

Feature Summary

Rated for operation up to +175°C junction temperature
Guaranteed 100% unclamped inductive switching capability
Low RDS(ON) minimizes conduction losses
Fast switching speed with optimized gate charge

Applications

Notebook battery power management
Load switches
Motor controls
DC-DC converters
Power management systems

Procurement Notes

Verify the specific suffix 'SPSWQ' indicates automotive qualification including AEC-Q101 certification and PPAP capability. Confirm the package type matches PowerDI5060-8/SWP (Type UX). Ensure the ordering quantity aligns with the standard 2,500 units per tape and reel carrier. Cross-reference the datasheet revision DS46015 Rev. 1-2 for accurate electrical limits.

Selection Notes

Select this component when high ambient temperatures require a +175°C rating. Use for applications needing robust inductive load handling due to guaranteed UIS performance. Choose based on the 100V BVDSS requirement and the need for low on-resistance in compact PowerDI packages. Verify compatibility with 6V or 10V gate drive levels for optimal RDS(ON) performance.

Part Context

This part belongs to the DMTH10 series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package, which provides enhanced thermal dissipation compared to standard plastic packages. The 'WQ' suffix denotes automotive-grade manufacturing standards.

Replacement Considerations

Check for direct substitutes within the DMTH10 series that share the same PowerDI5060-8 footprint and 100V rating. Verify pinout compatibility and thermal resistance values before swapping. Ensure any replacement also meets AEC-Q101 requirements if used in automotive contexts.