DMTH10H015LK3-13

$1.21

Description：MOSFET N-CH 100V 52.5A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4640f671897b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 52.5A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：52.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH10H015LK3-13

Overview

The DMTH10H015LK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 52.5A at a case temperature of +25°C. The device exhibits a maximum on-resistance of 15mΩ at VGS=10V and 20A, or 18mΩ at VGS=6V and 20A. Total power dissipation is rated at 2.1W in ambient conditions and 3.5W with a copper plate mount. Thermal resistance from junction to case is 2°C/W. Operating and storage temperatures range from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Features 100% unclamped inductive switching capability for robust end applications.
Low gate charge minimizes switching losses during operation.
Qualified to AEC-Q101 standards for automotive reliability.

Applications

Power management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment supports the specified thermal characteristics and package type.

Selection Notes

Select this component when a 100V N-channel MOSFET with low on-resistance is required for efficient power management. Consider the TO-252 (DPAK) package constraints regarding thermal dissipation and PCB layout. Evaluate the gate threshold voltage requirements against the driver circuit capabilities, noting the variation across different operating temperatures.

Part Context

This part belongs to the DMTH10H series of N-channel enhancement mode MOSFETs designed for high efficiency applications. It utilizes a TO-252 (DPAK) case constructed with molded plastic and matte tin annealed terminals over a copper leadframe. The device is moisture sensitive at Level 1 per J-STD-020 standards.

Replacement Considerations

The automotive-compliant variant DMTH10H015LK3Q is available under a separate datasheet. Verify pinout compatibility and electrical specifications before substituting with other 100V N-channel MOSFETs in the TO-252 package.