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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1871 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta), 46W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H015LPS-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 100 V and a maximum continuous drain current (I_D) of 44 A at case temperature of +25°C. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 16 mΩ at V_GS = 10V and 18 mΩ at V_GS = 6V. Operating junction temperatures range from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Guaranteed 100% unclamped inductive switching capability for robust end applications
- Designed to minimize on-state losses while maintaining superior switching performance
Applications
- Motor control
- DC-DC converters
- Power management
- Notebook battery power management
- Load switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the standard commercial grade part meets application requirements; automotive-grade variants with Q-suffixes are available for those requiring AEC-Q qualification and IATF 16949 manufacturing certification.
Selection Notes
Select this component when a 100V N-channel MOSFET with low R_DS(ON) is needed for compact designs. The PowerDI5060-8 package provides efficient thermal dissipation. Ensure gate drive voltages align with the specified thresholds for optimal conduction. Verify thermal management strategies account for the device's operating temperature limits.
Part Context
This device belongs to the DMTH10H series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These components utilize silicon technology and are designed for general-purpose switching applications. The product line emphasizes high conversion efficiency and reliability through advanced cell design.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to related automotive grade parts with a Q-suffix. Consult official substitution lists for equivalent specifications.
