DMTH10H015SPS-13

$0.37

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:79a7f2c96e4a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：8.4A (Ta), 50.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2343 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 55W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH10H015SPS-13

Overview

The DMTH10H015SPS-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage of 100V and a continuous drain current of 56A at TC=25°C. The maximum on-resistance is 14.5mΩ at VGS=10V and 19.5mΩ at VGS=6V. Total gate charge is 30.1nC, with input capacitance of 2343pF. Thermal resistance from junction to case is 1.6°C/W, supporting operation up to +175°C.

Feature Summary

Rated for high ambient temperature environments with an operating junction temperature up to +175°C
100% unclamped inductive switching (UIS) tested in production for robust end applications
Thermally efficient package design enabling cooler running applications
Qualified to JEDEC standards for high reliability

Applications

Motor control
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 compliance and Halogen/Antimony-free requirements if environmental specifications are mandatory for the target assembly process.

Selection Notes

Select this device when low on-state losses and fast switching performance are required in compact designs. The PowerDI5060-8 package provides superior thermal efficiency compared to traditional packages. Ensure the application environment supports the specified +175°C junction temperature rating for optimal reliability.

Part Context

This component belongs to the DMTH10 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount technology designed to minimize RDS(ON) while maintaining high switching speeds. The series targets power management applications requiring high reliability and thermal performance.