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Product Detailed Parameters
- Description：MOSFET N-CH 100V 51.7A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：51.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1477 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH10H025LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 22mΩ at VGS=10V and 43.7mΩ at VGS=4.5V, supporting continuous drain currents up to 51.7A at TC=+25°C. Packaged in a TO252 (DPAK) housing with matte tin terminals, it is supplied in tape and reel format.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Low gate charge minimizes switching losses during operation
- Lead-free finish compliant with RoHS directives and free of halogens and antimony
Applications
- Power management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the standard commercial version meets all application requirements before considering the automotive-compliant variant, which is documented under a separate datasheet as DMTH10H025LK3Q. Ensure compatibility with the specified TO252 package dimensions for PCB layout.
Selection Notes
Select this component for designs requiring high efficiency and fast switching capabilities. The low on-resistance characteristics minimize power losses, while the extended temperature rating suits demanding thermal conditions. Evaluate the gate threshold voltage and total gate charge against the driving circuit's output capabilities to ensure reliable turn-on and efficient switching performance.
Part Context
This part belongs to the DMTH series of surface-mount N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology housed in a TO252 (DPAK) package. The product line emphasizes low on-resistance and fast switching speeds to support high-efficiency power management solutions across various industrial and consumer electronics applications.
Replacement Considerations
An automotive-compliant alternative is available under the part number DMTH10H025LK3Q. Verify if the specific automotive qualification is necessary for the target application before substituting.
