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Product Detailed Parameters
- Description：MOSFET N-CH 100V 51.7A TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：51.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1477 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH10H025LK3Q is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It operates up to +175°C and meets AEC-Q101 standards with PPAP capability. The device features a TO-252 (DPAK) package. Key electrical parameters include a maximum drain-source voltage of 100V, a continuous drain current of 51.7A at TC=+25°C, and a static drain-source on-resistance of 22mΩ max at VGS=10V. Gate threshold voltage ranges from 1V to 3V.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching testing for robustness
- Low gate charge minimizes switching losses during operation
- Qualified to AEC-Q101 standards with PPAP support for automotive use
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2500 units per carrier. Confirm that the component is manufactured in IATF 16949 certified facilities to ensure compliance with automotive change control requirements. Check datasheet revision DS40359 Rev. 5 for the most current mechanical and electrical specifications before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring a 100V rating and operation in high-temperature environments up to 175°C. The low RDS(ON) characteristics make it suitable for minimizing power losses in power management applications. Ensure the gate drive voltage supports the specified thresholds for optimal conduction. Verify thermal management strategies align with the junction-to-case thermal resistance values provided in the datasheet.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs from Diodes Incorporated. It utilizes a TO-252 (DPAK) surface-mount package. The device is constructed using silicon technology and is compliant with RoHS directives. It is halogen and antimony-free, classified as a 'Green' device by the manufacturer.
Replacement Considerations
Consult official substitution lists or contact Diodes Incorporated directly for verified replacement part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating pinouts, thermal characteristics, and electrical ratings against the original datasheet.
