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Product Detailed Parameters
- Description：MOSFET N-CH 100V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1477 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H025LPSQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source breakdown voltage of 100V and supports continuous drain currents up to 45A at TC=+25°C. The device offers a maximum on-resistance of 23mΩ at VGS=10V and 30mΩ at VGS=6V. Designed for high ambient temperatures, it operates within a junction temperature range of -55°C to +175°C and includes 100% unclamped inductive switching testing.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching testing for robustness
- Low on-state resistance minimizes conduction losses
Applications
- Synchronous rectifiers
- DC-DC converters
- Primary side switching
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the official datasheet. Confirm that the component meets RoHS, Halogen-free, and Antimony-free requirements if environmental compliance is mandatory for the target assembly process.
Selection Notes
Select this component when an N-channel MOSFET requires 100V blocking capability and low RDS(ON) in a compact PowerDI5060-8 footprint. Ensure the application environment supports the specified +175°C thermal rating and that gate drive voltages align with the 6V or 10V on-resistance specifications provided in the electrical characteristics.
Part Context
This part belongs to the DMTH series of automotive-grade power MOSFETs manufactured by Diodes Incorporated. These devices are produced in IATF 16949 certified facilities and utilize a molded plastic 'Green' compound package. The series is engineered to meet stringent automotive reliability standards while providing efficient power switching solutions.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitutes. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout compatibility and thermal performance data.
