DMTH10H025LPSWQ-13

$0.29

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fbd36c448cf0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9.3A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1477 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H025LPSWQ-13

Overview

The DMTH10H025LPSWQ-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 23mΩ at VGS=10V and 30mΩ at VGS=6V, with continuous drain currents of 45A at TC=+25°C (VGS=10V) and 38A at TC=+25°C (VGS=6V). The device operates within a junction temperature range of -55°C to +175°C and utilizes a PowerDI5060-8/SWP package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Guaranteed 100% unclamped inductive switching capability for robust end applications
Designed to minimize on-state losses while maintaining fast switching speeds
Qualified for automotive applications with AEC-Q101 certification and PPAP capability

Applications

Notebook battery power management
Load switches
Synchronous rectifiers
DC-DC converters
Primary side switching

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the procurement channel provides valid traceability documentation required for IATF 16949 certified facilities.

Selection Notes

Select this component when an N-channel MOSFET requires a 100V breakdown voltage and low conduction losses under standard operating conditions. Consider the PowerDI5060-8 package for surface mount applications requiring efficient thermal dissipation. Verify gate drive voltage compatibility, as RDS(ON) specifications vary between 6V and 10V logic levels.

Part Context

This part belongs to the DMTH10 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to balance low on-resistance with superior switching performance. The DMTH10H025LPSWQ variant specifically targets high-efficiency power management solutions in compact form factors suitable for portable electronics and automotive systems.

Replacement Considerations

Consult official Diodes Incorporated cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on matching voltage or current ratings without verifying package dimensions and electrical characteristics against the original datasheet.

FAQ

Is the DMTH10H025LPSWQ suitable for automotive applications?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.