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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 7.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
- Rds On (Max) @ Id, Vgs：32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：683pF @ 50V
- Power - Max：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH10H032LDVWQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.2 mΩ at 10 V gate drive. It utilizes the PowerDI3333-8/SWP UX package, supporting surface mount installation with wettable flanks for automated optical inspection. The component operates within a junction temperature range of -55°C to 175°C and complies with RoHS3 standards.
Feature Summary
- N-channel enhancement mode MOSFET technology
- Surface mount PowerDI3333-8/SWP UX package with wettable flanks
- High thermal efficiency with low on-resistance characteristics
- Automotive qualified AEC-Q101 standard compliance
Applications
- Synchronous rectification in DC-DC converters
- Power management circuits for automotive electronics
- Low voltage power switching applications
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status against the official manufacturer datasheet. Confirm the package type matches the required PCB footprint and that wettable flank specifications align with assembly inspection protocols. Ensure the ordering quantity meets the manufacturer's standard packaging requirements.
Selection Notes
Select this component when a 100 V N-channel MOSFET with high current capability and automotive reliability is required. The low Rds(on) value supports efficient power conversion in space-constrained designs. Verify that the operating voltage and current ratings exceed the application's peak demands to ensure long-term stability and thermal performance.
Part Context
This part belongs to the DMTH10 series from Diodes Incorporated, designed for high-efficiency power switching. The series integrates advanced trench MOSFET technology to minimize conduction losses. The specific model targets applications requiring robust performance in automotive and industrial environments where small form factors and high thermal durability are critical.
Replacement Considerations
DMTH10H032LFVWQ-7
FAQ
What does the 'Q' suffix indicate for this MOSFET?
The 'Q' suffix denotes that the component meets the AEC-Q101 automotive qualification standard.
Is the PowerDI3333-8 package suitable for automated optical inspection?
Yes, the SWP (Wettable Flank) design allows for visual verification of solder joint quality via AOI.
What is the maximum junction temperature rating?
The maximum operating junction temperature is 175°C.
