DMTH10H032LFVW-13

Overview

The DMTH10H032LFVW-13 is a 100 V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) package. It features a maximum drain-source on-resistance of 30 mΩ at VGS = 10 V and 50 mΩ at VGS = 4.5 V. The device supports a continuous drain current of 26 A at TC = +25°C and operates within a junction temperature range of -55°C to +175°C. Total gate charge is 11.9 nC at VGS = 10 V.

Feature Summary

• 100% Unclamped Inductive Switching (UIS) tested in production for robustness
• Small form factor thermally efficient package enables higher density end products
• Wettable flank design facilitates improved optical inspection

Applications

• Backlighting
• Power management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units. Confirm that the PowerDI3333-8 (SWP) package with wettable flanks meets your automated optical inspection requirements. Ensure thermal management designs account for the specified junction-to-ambient resistance values under your intended PCB copper layout conditions.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for high-efficiency power management. The 100 V rating suits applications requiring moderate voltage blocking capabilities. Consider the thermal performance characteristics if operating near the upper limits of the specified temperature range or if relying on ambient cooling rather than case-mounted heat sinking.

Part Context

This part belongs to the DMTH10 series of N-channel enhancement mode MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining switching performance. The DMTH10H032LFVW variant specifically utilizes the PowerDI3333-8 package to provide a balance between electrical performance and physical footprint for surface-mount applications.

Replacement Considerations

DMTH10H032LFVW-7