DMTH10H032LFVW-7

$0.21

Description：MOSFET BVDSS: 61V~100V PowerDI33
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:93ccde8c0d48 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V PowerDI33
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：683 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH10H032LFVW-7

Overview

The DMTH10H032LFVW-7 is a 100V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) Type UX package. It features a maximum drain-source on-resistance of 30mΩ at VGS=10V and 50mΩ at VGS=4.5V. The device supports a continuous drain current of 26A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of up to 2.5V and a total gate charge of 11.9nC at VGS=10V.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
Features wettable flank terminals to facilitate improved optical inspection during assembly.
Manufactured using totally lead-free materials that are fully RoHS compliant and free of halogens and antimony.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel carrier configuration as defined in the manufacturer's documentation. Confirm that the PowerDI3333-8 (SWP) Type UX package variant matches the required footprint and thermal design specifications for the target application before finalizing procurement orders.

Selection Notes

Select this component when a compact surface-mount solution is required for 100V applications needing low conduction losses. The small form factor enables higher density designs compared to traditional packages. Ensure the driving circuit can supply sufficient gate voltage to achieve the minimum on-resistance specified in the datasheet for optimal efficiency.

Part Context

This part belongs to the DMTH10 series of N-channel MOSFETs manufactured by Diodes Incorporated. The series utilizes silicon technology optimized for low RDS(ON) while maintaining robust switching characteristics. The PowerDI3333-8 package provides a thermally efficient solution suitable for space-constrained consumer and industrial electronics.