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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 6.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：544pF @ 50V
- Power - Max：1.4W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (SWP) (Type UXD)
- Grade：-
- Qualification：-
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Overview
The DMTH10H032SDVW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 26 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 32 mΩ at 10 V gate drive. It utilizes the PowerDI3333-8/SWP package, which supports surface mount installation with wettable flanks for enhanced inspection reliability. The component operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Surface-mount construction utilizing the PowerDI3333-8/SWP package with wettable flank technology for improved solder joint visibility and reliability.
- High-voltage capability with a 100 V breakdown rating suitable for demanding power switching applications.
- Low on-resistance performance optimized for efficient conduction in synchronous rectification and load switch circuits.
Applications
- Synchronous rectification in DC-DC converters
- Load switches for high-side or low-side control
- Power management modules requiring compact footprints
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm package type and reel quantity. Ensure the ordering part number matches the exact electrical specifications required for the target application. Cross-reference datasheets for thermal derating curves and safe operating area limits before finalizing procurement decisions.
Selection Notes
Select this component when a 100 V rating and compact SMD footprint are required. Compare Rds(on) values at the intended gate drive voltage against system efficiency targets. Evaluate the thermal resistance characteristics of the PowerDI3333-8 package relative to the expected power dissipation in the specific PCB layout environment.
Part Context
This part belongs to the DMTH10 series of N-channel MOSFETs from Diodes Incorporated. The series focuses on balancing high voltage ratings with low on-resistance in small surface-mount packages. These devices are engineered for modern power electronics where space constraints and thermal performance are critical design factors.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Verify pinout compatibility and thermal characteristics before replacing with alternative part numbers.
