DMTH10H038SPDWQ-13

$0.35

Description：MOSFET 2N-CH 100V 25A PWRDI50
Series：-

SKU:5b2ac4f944a1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 25A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Rds On (Max) @ Id, Vgs：33mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：544pF @ 50V
Power - Max：2.7W (Ta), 39W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：Automotive
Qualification：AEC-Q101

Download product information

DMTH10H038SPDWQ-13

Overview

The DMTH10H038SPDWQ is a dual N-channel enhancement mode MOSFET rated for 100V drain-source voltage and operating up to +175°C junction temperature. It features a maximum on-resistance of 33mΩ at VGS=10V and supports continuous drain currents of 25A at +25°C case temperature. Packaged in PowerDI5060-8/SWP, it includes wettable flank terminals for optical inspection.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications
Wettable flank design enables improved optical inspection of solder joints
Rated for high ambient temperatures with operation up to +175°C
100% unclamped inductive switching (UIS) tested in production

Applications

DC-DC converters
Motor control systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2500 units per carrier. Confirm that the component meets IATF 16949 manufacturing requirements if your application demands strict automotive change control protocols. Ensure compatibility with the specified PowerDI5060-8/SWP footprint during procurement planning.

Selection Notes

Select this component when designing circuits requiring dual N-channel configurations within a compact PowerDI5060-8 package. The low input capacitance and fast switching speeds make it suitable for high-frequency applications. Consider the +175°C rating for environments where thermal management is challenging or ambient temperatures are elevated.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically designed to meet stringent reliability standards. It utilizes a 'Green' molding compound that is halogen and antimony-free. The part is manufactured in facilities certified under IATF 16949, ensuring consistent quality for critical automotive electronics.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic cross-references may not match the specific AEC-Q101 qualification or wettable flank characteristics required for this automotive-grade component.