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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：68mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：296 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH10H071LFDFW-13 is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It features a U-DFN2020-6/SWP package with a 0.6mm profile and a 4mm² footprint. The device supports junction temperatures up to +175°C and includes sidewall plating for optical inspection. Electrical characteristics include a maximum RDS(ON) of 68mΩ at VGS=10V, 86mΩ at VGS=6V, and 116mΩ at VGS=4.5V. Continuous drain current ratings are 4.6A at TA=+25°C and 3.3A at TA=+100°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Manufactured with a low-profile 0.6mm package suitable for space-constrained designs
- Sidewall plated terminals facilitate improved optical inspection during assembly
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel carrier configuration as defined in the manufacturer's documentation. Confirm that the component meets AEC-Q101 qualification standards if required for the target automotive application. Ensure the design accommodates the specified thermal resistance values under the intended PCB copper layout conditions.
Selection Notes
Select this component when a compact surface-mount solution is required for 100V switching applications. The device offers optimized on-resistance across multiple gate voltage levels, supporting efficient drive from standard logic or dedicated gate drivers. Consider the thermal performance relative to the available copper area on the printed circuit board.
Part Context
This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the U-DFN2020-6/SWP (Type UXG) package, which provides a small footprint while maintaining robust thermal dissipation capabilities through its exposed pad design.
Replacement Considerations
Consult official substitution lists for equivalent devices within the same voltage and current class. Verify pinout compatibility and thermal characteristics before replacing existing components in established designs.
