ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：68mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：296 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
- Package / Case：6-UDFN Exposed Pad
Download product information
Overview
The DMTH10H071LFDFWQ-13 is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It operates up to +175°C and features a U-DFN2020-6/SWP package with a 0.6mm profile. The device has a maximum drain-source on-resistance of 68mΩ at VGS=10V and 4A, or 86mΩ at VGS=6V and 4A. Continuous drain current reaches 4.6A at TA=25°C. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features sidewall plating to improve optical inspection capabilities
- Includes 100% unclamped inductive switching (UIS) testing in production
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required packing quantity and carrier type before procurement. Confirm that the component meets all necessary automotive quality standards, including AEC-Q101 qualification and PPAP requirements, for the intended application environment.
Selection Notes
Select this component when low-profile packaging and high thermal stability are required. The U-DFN2020-6/SWP footprint provides a compact solution suitable for space-constrained designs. Ensure gate drive voltages align with the specified RDS(ON) performance curves for optimal efficiency.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes a specialized U-DFN2020-6/SWP package designed for improved reliability and manufacturing inspection. The product line supports stringent automotive industry standards through certified manufacturing processes.
Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, package dimensions, and electrical characteristics to ensure functional compatibility.
