DMTH10H071LFDFWQ-7

$0.16

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:628b7f7372f2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：296 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
Package / Case：6-UDFN Exposed Pad

Download product information

DMTH10H071LFDFWQ-7

Overview

The DMTH10H071LFDFWQ-7 is a 100V N-channel enhancement mode MOSFET designed for automotive applications. It features a U-DFN2020-6/SWP (Type UXG) package with a 0.6mm profile and a PCB footprint of 4mm². The device is rated to +175°C junction temperature and qualified to AEC-Q101 standards. Electrical characteristics include a maximum drain-source breakdown voltage of 100V, a continuous drain current of 4.6A at TA=+25°C, and a static drain-source on-resistance of 68mΩ at VGS=10V.

Feature Summary

Rated to +175°C for high ambient temperature environments
100% Unclamped Inductive Switching (UIS) tested in production
Low RDS(ON) minimizes on-state losses
0.6mm profile ideal for low-profile applications

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against the required reel quantity before procurement. Confirm that the component meets the necessary PPAP requirements for your specific automotive application tier. Ensure the design accommodates the U-DFN2020-6/SWP package dimensions and suggested pad layout provided in the datasheet to maintain thermal and mechanical integrity.

Selection Notes

Select this component when an automotive-grade N-channel MOSFET with a 100V rating and +175°C capability is required. The low on-resistance makes it suitable for power management and DC-DC conversion where efficiency is critical. Consider the small 4mm² footprint if board space is constrained. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive MOSFETs. It utilizes the U-DFN2020-6/SWP package, which offers sidewall plating for improved optical inspection. The device is manufactured in IATF 16949 certified facilities and is halogen and antimony free.