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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：57mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：266 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 51.7W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H072LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 20A at a case temperature of +25°C, with a typical static drain-source on-resistance of 57mΩ at VGS=10V. Packaged in a PowerDI5060-8 (SWP) format, it supports surface mount installation.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features 100% unclamped inductive switching capability
- Designed to minimize on-state losses while maintaining high conversion efficiency
Applications
- Notebook battery power management
- Load switches
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the PowerDI5060-8 package dimensions align with the target PCB footprint. Ensure the component meets RoHS compliance requirements for the intended market. Validate thermal resistance parameters against the system's heat dissipation capabilities before finalizing the procurement order.
Selection Notes
Select this component when applications require robust performance in high ambient temperature environments due to its +175°C rating. Consider the low on-resistance characteristics for minimizing conduction losses in power management circuits. Evaluate the 100V breakdown voltage suitability for the specific circuit operating conditions. Assess the package size constraints against the available board space for the PowerDI5060-8 form factor.
Part Context
This part belongs to the DMTH series of advanced N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on balancing low on-resistance with superior switching performance. These devices are engineered for modern power management solutions requiring reliability and efficiency in compact surface-mount packages.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical ratings and package dimensions carefully. Do not assume functional equivalence based solely on similar naming conventions or generic specifications.
