DMTH10H1M7STLW-13

$5.27

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a62db78266d6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：250A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：147 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9871 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：6W (Ta), 250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI1012-8
Package / Case：8-PowerSFN

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DMTH10H1M7STLW-13

Overview

The DMTH10H1M7STLW-13 is a 100V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the POWERDI1012-8 (TOLL) surface-mount package and features a maximum drain-source on-resistance of 1.85mΩ at VGS=10V. The device supports a continuous drain current of 250A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 147nC, and thermal resistance from junction to case of 0.6°C/W.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features wettable flank terminals to improve optical inspection reliability
Manufactured using lead-free finish with RoHS compliance and halogen/antimony-free materials

Applications

Motor controls
DC-DC converters
Power management systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 1,500-unit tape and reel packaging configuration. Confirm that the required component meets standard commercial specifications rather than automotive-grade requirements, as the automotive-compliant variant is designated under a separate datasheet. Ensure compatibility with the specified POWERDI1012-8 footprint during procurement.

Selection Notes

Select this component when low conduction losses are critical alongside superior switching performance in compact designs. The TOLL package provides enhanced thermal dissipation compared to traditional packages. Verify that the application environment does not require AEC-Q101 automotive qualification, as this specific part number represents the commercial grade version.

Part Context

This device belongs to the DMTH10 series of N-channel enhancement mode MOSFETs designed to minimize RDS(ON). It is produced by Diodes Incorporated and is distinct from automotive-specific variants like the DMTH10H1M7STLWQ. The product is housed in the POWERDI1012-8 package, which offers a low profile and high heat efficiency for modern power electronics.