DMTH10H2M2LPSWQ-13

$0.93

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:7079bbbb0882 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：153A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：116 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6239 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：4W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H2M2LPSWQ-13

Overview

The DMTH10H2M2LPSWQ-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum on-resistance of 3.2mΩ at VGS=10V and 4.5mΩ at VGS=4.5V, supporting continuous drain currents of 153A at TC=+25°C and 129A at VGS=4.5V. The device operates up to +175°C junction temperature with ±20V gate-source voltage rating.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Manufactured with wettable flank terminals to improve optical inspection reliability
Qualified to AEC-Q101 standards with PPAP capability for automotive applications

Applications

Engine-management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the PowerDI5060-8/SWP (Type UX) package variant matches the required footprint for the target PCB layout. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by the end product design requirements.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low input capacitance and fast switching speed make it suitable for efficient power conversion stages. Verify that the thermal management strategy supports the specified power dissipation limits under the intended operating conditions.

Part Context

This part belongs to the DMTH10 series of automotive-grade MOSFETs from Diodes Incorporated. These devices are manufactured in IATF16949 certified facilities to meet strict automotive quality standards. The series is designed to provide reliable switching capabilities for demanding power management applications in modern vehicles.