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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4843 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H4M5LPSW is a 100V N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 100V and a continuous drain current of 107A at TC = +25°C. The device offers a typical on-resistance of 4.9mΩ at VGS = 10V and 6.7mΩ at VGS = 4.5V. Total gate charge is typically 80nC, with input capacitance of 4843pF. Thermal resistance from junction to case is 1.1°C/W. Operating temperature range spans -55°C to +175°C.
Feature Summary
- Ensures robust end applications through 100% Unclamped Inductive Switching (UIS) testing in production.
- Minimizes on-state losses via low RDS(ON) while maintaining superior switching performance.
- Provides high conversion efficiency supported by low input capacitance and fast switching speed.
Applications
- Motor controls
- DC-DC converters
- Power managements
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the PowerDI5060-8 package variant matches the Type UX mechanical outline required for your PCB footprint. Ensure compliance with RoHS directives and Halogen-free definitions if environmental specifications are mandatory for your assembly process.
Selection Notes
Select this component when a 100V rating and high current handling capability near 107A are required. Evaluate thermal management needs based on the 1.1°C/W junction-to-case resistance for heatsinked designs. Consider the 80nC total gate charge for driver capability requirements. Verify that the PowerDI5060-8 surface mount form factor fits within the available board space constraints.
Part Context
This part belongs to the DMTH series of advanced N-Channel Enhancement Mode MOSFETs designed for notebook battery power management and load switch applications. It utilizes the PowerDI®5060-8 package, which provides a compact footprint with an exposed drain pad for efficient heat dissipation. The device represents a newer generation optimized for minimizing on-resistance without compromising switching speed.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
