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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4327 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH10H4M6SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 100V drain-source breakdown voltage and a maximum on-resistance of 4.6mΩ at VGS=10V. The device supports a continuous drain current of 118.8A at TC=25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount format, it includes an internal body diode with a forward voltage of 1.2V max.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Verified 100% unclamped inductive switching (UIS) capability
- Designed for low on-state losses and high conversion efficiency
Applications
- Notebook battery power management
- Load switches
- Motor control
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the application environment aligns with the specified thermal resistance values and operating temperature limits defined in the datasheet.
Selection Notes
Select this component when a 100V rating and low RDS(ON) are required for high-current applications. The PowerDI5060-8 package provides a balance between thermal performance and board space. Consider the +175°C rating for high ambient temperature environments. Verify gate drive requirements against the specified threshold voltage and total gate charge parameters.
Part Context
This part belongs to the DMTH10 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI® 5060-8 package, which is designed for superior thermal dissipation compared to standard packages. The product line targets power management solutions requiring robust switching performance and reliability.
Replacement Considerations
Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and electrical characteristics.
