DMTH10H4M6SPSW-13

$0.72

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9e1e5962e6be Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4327 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH10H4M6SPSW-13

Overview

The DMTH10H4M6SPSW-13 is a 100V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum on-resistance of 4.9mΩ at VGS=10V and a continuous drain current of 115A at TC=25°C. The device supports an operating temperature range from -55°C to +175°C with a total power dissipation of 136W at case temperature. Key electrical parameters include a gate-source voltage of ±20V, input capacitance of 4327pF, and total gate charge of 66nC.

Feature Summary

100% Unclamped Inductive Switching (UIS) tested in production for robustness
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Motor control
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable environmental directives and regulatory standards relevant to your target market before finalizing procurement specifications.

Selection Notes

Select this component when high conversion efficiency and low on-state losses are critical. Ensure the thermal design accommodates the specified junction-to-case resistance and power dissipation limits under expected load conditions.

Part Context

This part belongs to Diodes Incorporated's new generation of N-channel MOSFETs designed to minimize RDS(ON) while maintaining superior switching performance. It is specifically engineered for notebook battery power management and load switch applications.