ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V PowerDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：8.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3142 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：3.5W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMTH12H007SPSWQ is a 120V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 8.9mΩ at VGS=10V and 16mΩ at VGS=6V, supporting continuous drain currents of 84A and 70A respectively at TC=+25°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 3.5W (ambient) or 125W (case). Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 44nC, and avalanche energy rating of 360.4mJ.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Thermally efficient PowerDI5060-8 package design
- AEC-Q101 qualified and PPAP capable for automotive use
Applications
- High efficiency power management applications
- DC-DC converters
- Automotive electronics requiring specific change control
Procurement Notes
Verify the complete part number including the -13 suffix for tape and reel packaging quantities. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure the ordering quantity aligns with the standard 2,500 unit carrier configuration provided by the manufacturer.
Selection Notes
Select this component for designs requiring low on-state resistance and high thermal stability. The 120V rating suits intermediate voltage bus architectures. Verify that the gate drive voltage supports the specified RDS(ON) performance levels at either 6V or 10V logic thresholds.
Part Context
This device belongs to Diodes Incorporated's DMTH series of silicon MOSFETs. It utilizes the PowerDI®5060-8 surface mount package, which provides a profile under 1.1mm. The product line targets applications demanding robust switching performance and minimized conduction losses in compact form factors.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on voltage or current ratings without reviewing pinout and thermal characteristics.
