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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V PowerDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2344 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH15H017SPSWQ is a 150V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 19mΩ at VGS=10V and 22mΩ at VGS=8V. Continuous drain current reaches 61A at TC=+25°C and 40A at TC=+100°C. The device supports an operating temperature range from -55°C to +175°C, with a junction-to-case thermal resistance of 1.4°C/W.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Thermally efficient package design for cooler running applications
- Low input capacitance and fast switching speed
Applications
- Motor control
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 2,500 units. Confirm that the PowerDI5060-8/SWP package type matches the target PCB footprint. Ensure compliance with RoHS and halogen-free requirements if mandated by the end product specifications.
Selection Notes
Select this component when high conversion efficiency and low on-state losses are critical. The low gate charge and fast switching characteristics make it suitable for high-frequency power management designs. Verify that the 150V breakdown voltage provides adequate margin for the specific circuit application.
Part Context
This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It is AEC-Q101 qualified and PPAP capable, manufactured in IATF 16949 certified facilities. The device utilizes silicon technology within a molded plastic 'Green' molding compound package.
Replacement Considerations
Check datasheets for other DMTH series parts with similar 150V ratings and comparable RDS(on) values. Verify pinout compatibility and package dimensions before substituting.
