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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：77 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：5000 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 136W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH3002LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 240A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 1.6mΩ at V_GS = 10V and 25A. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 (Type K) surface-mount package.
Feature Summary
- Thermally efficient PowerDI5060-8 package design for cooler running applications
- Low profile construction suitable for thin application requirements
- Optimized for high conversion efficiency with minimized on-state losses
- Fast switching speed supported by low input capacitance
Applications
- DC-DC Converters
- Load Switch
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance and halogen-free status against current regulatory standards. Ensure storage conditions adhere to moisture sensitivity level 1 per J-STD-020. Validate that the specific ordering suffix matches the required tape and reel packaging quantity.
Selection Notes
Select this component for power management circuits requiring high current handling in compact form factors. Evaluate thermal resistance parameters against system heat dissipation capabilities. Consider gate threshold voltage characteristics for compatibility with available drive logic levels. Assess safe operating area limits under expected pulsed load conditions.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 package family with other devices in the lineup, offering standardized footprint compatibility for PCB layout designs while providing specific electrical performance tailored for 30V applications.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pin configurations and thermal characteristics before implementation.
