DMTH3004LFG-7

$0.14

Description：MOSFET N-CH 30V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e36a98a8cbd4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH3004LFG-7

Overview

The DMTH3004LFG-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of 30V and a maximum continuous drain current (I_D) of 75A at a case temperature of +25°C. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 5.5mΩ at V_GS = 10V and 8.5mΩ at V_GS = 4.5V. Total gate charge (Q_g) is 44nC at V_GS = 10V. Thermal resistance from junction to case (R_θJC) is 3°C/W, with a total power dissipation of 50W at TC = +25°C. Operating and storage temperatures range from -55°C to +175°C.

Feature Summary

Engineered for high-efficiency power management through minimized on-state resistance and superior switching performance.
Features a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages.
Rated for 100% Unclamped Inductive Switching (UIS) avalanche capability.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates packaging in 2,000-unit tape and reel quantities. Confirm compliance requirements such as RoHS and lead-free status directly with the manufacturer or authorized distributors, as these specifications are subject to change without notice.

Selection Notes

Select this component for applications requiring low conduction losses and compact footprint within a 30V system. Ensure the design accommodates the thermal characteristics, specifically the R_θJC of 3°C/W, to maintain junction temperatures within the specified -55°C to +175°C range during operation.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 package, which is designed to provide high-density mounting and improved thermal efficiency compared to traditional plastic surface-mount packages like SO-8.