DMTH3004LFGQ-13

$0.35

Description：MOSFET N-CH 30V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e11637edb7d8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH3004LFGQ-13

Overview

The DMTH3004LFGQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI3333-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 5.5mΩ at VGS=10V and 8.5mΩ at VGS=4.5V, with continuous drain currents reaching 75A at case temperatures of +25°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability applications
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) rated
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive quality standards if utilized in vehicle electronics. Ensure the selected variant aligns with the intended thermal management strategy and board space constraints associated with the PowerDI3333-8 footprint.

Selection Notes

Select this component when low on-state resistance is critical for power efficiency in compact designs. The small form factor occupies significantly less board area compared to traditional SO-8 packages. Consider the high thermal capability and robust UIS performance for environments requiring superior reliability and extended operating temperature ranges.

Part Context

This part belongs to the DMTH3004 series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining excellent switching performance. The series targets high-efficiency power management solutions, offering a thermally efficient package suitable for dense end-product layouts.