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Product Detailed Parameters
- Description：MOSFET N-CH 30V 21A/75A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds：2370 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：107W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH3004LK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 75A at case temperatures of +25°C or +100°C, with a pulsed drain current capability of 105A. Static drain-source on-resistance is specified as a maximum of 4mΩ at VGS=10V and 7mΩ at VGS=4.5V. Total power dissipation reaches 107W under steady-state conditions.
Feature Summary
- Qualified to AEC-Q101 standards for automotive high reliability applications
- Rated for operation in high ambient temperature environments up to +175°C
- Low on-resistance minimizes conduction losses during operation
- Low input capacitance supports efficient switching performance
Applications
- Power management functions
- DC-DC converters
- BLDC motor control
- Reverse polarity protection
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen-free. Ensure the procurement documentation explicitly references the AEC-Q101 qualification status required for automotive-grade deployment.
Selection Notes
Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low on-resistance characteristics make it suitable for applications demanding high conversion efficiency. Verify that the gate drive voltage aligns with the specified thresholds for optimal static resistance performance.
Part Context
This part belongs to the DMTH3004 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TO252 (DPAK) surface-mount package designed for efficient thermal dissipation through an exposed drain pad. The series is engineered specifically to address the stringent requirements of modern automotive electronic systems.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts, thermal resistance values, and electrical ratings before implementing any alternative components.
