DMTH31M1LPSW-13

$0.51

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3e4717ef6d15 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5938 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.8W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH31M1LPSW-13

Overview

The DMTH31M1LPSW-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device supports a continuous drain current (ID) of 130A at TC = +25°C with an on-resistance (RDS(ON)) of 0.95mΩ at VGS = 10V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Thermally efficient PowerDI5060-8 package design for cooler running applications
Low RDS(ON) characteristics to minimize on-state power losses
100% Unclamped Inductive Switch (UIS) tested in production

Applications

Notebook battery power management
Load switches
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the component matches the required PowerDI5060-8/SWP package type. Ensure compliance with RoHS and halogen-free requirements if specified by the end application standards. Cross-reference the manufacturer part number against authorized distributor lists to confirm authenticity.

Selection Notes

Select this component for low-voltage applications requiring high current handling and thermal efficiency. The 30V rating suits systems operating near or below this threshold. Consider the 175°C junction temperature capability for demanding thermal environments. Verify that the gate drive voltage aligns with the optimal RDS(ON) performance specifications provided in the electrical characteristics.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to balance low on-resistance with superior switching performance. It utilizes a molded plastic green molding compound with UL flammability classification 94V-0. The device is lead-free and complies with EU RoHS directives.

Replacement Considerations

An automotive-compliant version is available under the separate part number DMTH31M1LPSWQ. Verify pinout compatibility and thermal resistance values before substituting with other manufacturers' equivalents.

FAQ

Is the DMTH31M1LPSW-13 suitable for automotive body control applications?

The standard DMTH31M1LPSW-13 is not explicitly designated as automotive-grade. An automotive-compliant variant, DMTH31M1LPSWQ, is available under a separate datasheet.