DMTH32M5LPS-13

$0.33

Description：MOSFET N-CH 30V 170A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b47379989218 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 170A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3944 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH32M5LPS-13

Overview

The DMTH32M5LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI5060-8 surface-mount package. At TC = +25°C, it supports a continuous drain current of 170A at VGS = 10V and 140A at VGS = 4.5V. The static drain-source on-resistance (RDS(ON)) is specified as 2.2mΩ max at VGS = 10V and 3.2mΩ max at VGS = 4.5V, both tested at ID = 30A.

Feature Summary

Designed to minimize on-state losses while maintaining superior switching performance
Thermally efficient package profile suitable for thin applications
High conversion efficiency with low input capacitance
Lead-free finish compliant with RoHS directives

Applications

DC-DC Converters
Load Switch

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status. Ensure the application design accounts for the thermal resistance characteristics provided in the datasheet to maintain safe operating temperatures.

Selection Notes

Select this component for power management circuits requiring high current handling in a compact form factor. The low RDS(ON) values are critical for minimizing conduction losses in high-efficiency designs. Consider the 175°C maximum junction temperature rating for high-temperature environments. Verify gate drive voltages align with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the DMTH series of advanced N-channel MOSFETs from Diodes Incorporated. It is housed in the PowerDI5060-8 case, which provides a low-profile solution for space-constrained PCB layouts. The series is engineered to balance low on-resistance with fast switching speeds, targeting modern power supply architectures.