DMTH32M5LPSQ-13

$1.00

Description：MOSFET N-CH 30V 170A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0830e0f75da9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 170A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3944 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH32M5LPSQ-13

Overview

The DMTH32M5LPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 package with an exposed drain pad for thermal management. Key electrical parameters include a maximum on-resistance of 2.2mΩ at VGS=10V and 3.2mΩ at VGS=4.5V, both measured at a continuous drain current of 30A. Continuous drain current reaches 170A at TC=+25°C. Total gate charge is 68nC at VGS=10V.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive applications.
Rated for operation up to +175°C junction temperature.
Features low on-state resistance to minimize conduction losses.
Includes 100% unclamped inductive switching testing during production.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the required package variant matches either the standard PowerDI5060-8 or the SWP (Type UX) option. Ensure design compliance with IATF 16949 manufacturing requirements if the application mandates automotive change control protocols.

Selection Notes

Select this component for high-current switching applications requiring robust thermal performance in elevated ambient temperatures. The low RDS(ON) characteristics support efficient power conversion in DC-DC topologies. Verify that the 30V breakdown voltage aligns with system rail specifications and that the gate drive voltage supports the specified threshold levels for optimal conduction.

Part Context

This part belongs to the DMTH series of automotive-grade MOSFETs from Diodes Incorporated. It is designed specifically for environments demanding high reliability and thermal resilience. The PowerDI5060-8 packaging provides a compact footprint suitable for space-constrained board layouts while maintaining significant current handling capabilities through direct thermal coupling.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pin configurations and thermal resistance values when considering alternative packages.