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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：61A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.55mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：152.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11112 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.13W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH3M70LPSW-13 is a single N-channel MOSFET manufactured by Diodes Incorporated, designed for surface-mount applications. It utilizes the PowerDI5060-8/SWP package to provide efficient thermal management and compact footprint solutions. The device features a drain-source breakdown voltage (BVDSS) range of 25V to 30V, making it suitable for low-voltage power switching environments. Key electrical characteristics include a maximum continuous drain current (Id) of 140A at room temperature and a typical on-resistance (Rds(on)) of 3.7 milliohms. These parameters ensure high efficiency and minimal conduction losses in demanding circuit designs.
Feature Summary
- Single N-channel enhancement mode field-effect transistor configuration
- PowerDI5060-8/SWP surface-mount package for optimized thermal performance
- Low on-resistance design for reduced conduction losses
- High continuous drain current capability for robust power handling
Applications
- DC-DC converter output stages
- Motor control circuits
- Power distribution systems
- Battery protection modules
Procurement Notes
Verify the specific suffix '13' corresponds to the standard tape and reel packaging quantity of 2500 units as documented by Diodes Incorporated. Confirm that the PowerDI5060-8/SWP package variant matches the required board layout specifications. Ensure compliance with RoHS directives and check for any specific environmental or trade compliance documentation required for your region before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage, high-current N-channel MOSFET is required in a compact SMD form factor. The 3.7 milliohm Rds(on) offers superior efficiency compared to higher resistance alternatives in the same voltage class. Consider the 140A current rating for applications requiring significant load handling within the 25V-30V BVDSS window. Evaluate thermal dissipation requirements based on the PowerDI5060-8/SWP package capabilities.
Part Context
This part belongs to Diodes Incorporated's DMTH series of superjunction MOSFETs, which are engineered for high-efficiency power switching. The PowerDI family provides industry-standard footprints with enhanced thermal conductivity. The DMTH3M70LPSW-13 specifically targets applications needing low on-resistance and high current density in space-constrained designs, leveraging advanced silicon technology for improved performance over traditional planar devices.
Replacement Considerations
Direct replacements must match the 25V-30V BVDSS, ~3.7mOhm Rds(on), and PowerDI5060-8/SWP package. Verify pinout compatibility and thermal characteristics. Consult official substitution lists from Diodes Incorporated for validated equivalents.
