DMTH3M70LPSWQ-13

$0.88

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:11e53af51347 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：61A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.55mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：152.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11112 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.13W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH3M70LPSWQ-13

Overview

The DMTH3M70LPSWQ-13 is a 30V N-channel enhancement mode MOSFET in a PowerDI5060-8/SWP package. It features a maximum drain-source voltage of 30V and gate-source voltage of ±20V. At VGS=10V, the on-resistance is 0.55mΩ with a continuous drain current of 150A at TC=+25°C. At VGS=4.5V, RDS(ON) is 0.95mΩ with a current of 120A. The device supports an operating temperature range of -55°C to +175°C and includes a total gate charge of 152.7nC at VGS=10V.

Feature Summary

Rated for operation up to +175°C junction temperature
Passes 100% unclamped inductive switching (UIS) testing
Package profile under 1.1mm for thin applications
Suitable for automotive applications requiring AEC-Q101 qualification

Applications

Notebook battery power management
Load switches
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets RoHS 3 and halogen-free requirements if environmental compliance is mandatory for the target assembly process. Ensure the selected part number matches the exact voltage and current ratings required by the circuit design specifications.

Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in high-current paths. The 30V rating suits low-voltage systems where higher voltage margins are unnecessary. Consider the thermal characteristics and package size constraints, as the PowerDI5060-8 offers a compact footprint suitable for space-limited designs like portable electronics.

Part Context

This device belongs to Diodes Incorporated's generation of MOSFETs designed to balance low RDS(ON) with superior switching performance. It utilizes silicon technology within a molded plastic 'Green' compound package. The product line targets efficiency improvements in power management circuits while maintaining robustness against inductive load conditions.