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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V PowerDI101
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：0.85mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：13185 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：6W (Ta), 300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI1012-8
- Package / Case：8-PowerSFN
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Overview
The DMTH4001STLWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 40V and a continuous drain current (I_D) of 300A at a case temperature of +25°C. The device exhibits a maximum static drain-source on-resistance (R_DS(ON)) of 0.85mΩ when the gate-source voltage (V_GS) is 10V and the drain current is 30A. It operates within a junction temperature range of -55°C to +175°C and utilizes a POWERDI1012-8 (TOLL) surface-mount package.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Manufactured with wettable flank terminals to facilitate improved optical inspection
- Qualified to AEC-Q101 standards and supported by PPAP documentation for automotive use
Applications
- Motor controls
- DC-DC converters
- Power management systems
Procurement Notes
Verify that the specific part number matches the required automotive qualification level, as this component is designed for applications requiring strict change control. Confirm compliance with RoHS 3 directives and ensure the selected packaging carrier aligns with automated assembly requirements. Cross-reference datasheet revision numbers during procurement to guarantee accurate electrical parameters.
Selection Notes
Select this component for designs requiring low conduction losses and robust switching performance under high thermal stress. Evaluate the thermal resistance characteristics against the system's heat dissipation capabilities. Ensure the gate drive circuitry can supply the necessary voltage to achieve the specified low on-resistance values while maintaining safe operating area limits.
Part Context
This device belongs to Diodes Incorporated's advanced automotive-grade MOSFET portfolio. It is produced in IATF 16949 certified facilities to meet stringent quality standards. The POWERDI1012-8 package provides a compact footprint suitable for space-constrained printed circuit boards while offering efficient thermal transfer through the exposed drain pad.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Verify pinout compatibility and thermal resistance specifications before integrating any substitute components into existing automotive designs.
