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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V TO263 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：77.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7180 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：6W (Ta), 166.7W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AB (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The DMTH4002SCTB is a 40V N-channel enhancement mode MOSFET in a TO263AB (D2PAK) package. It features a maximum drain-source voltage of 40V and a continuous drain current of 192A at +25°C case temperature. The device has a maximum on-resistance of 3mΩ at VGS=10V and ID=90A, with a gate threshold voltage ranging from 2V to 4V. Total gate charge is typically 77.5nC. It supports an operating junction temperature up to +175°C and includes thermal resistance values of 0.9°C/W (junction-to-case) and 25°C/W (junction-to-ambient).
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C.
- Manufactured using silicon technology optimized for low on-state resistance to minimize power losses.
- Undergoes 100% unclamped inductive switching testing during production to ensure robustness.
- Compliant with RoHS directives and manufactured as a halogen-free and antimony-free green device.
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all necessary automotive or industrial qualification standards if the application requires AEC-Q compliance or IATF 16949 manufacturing certification. Ensure the final assembly process accommodates the specified thermal characteristics and moisture sensitivity levels defined in the datasheet.
Selection Notes
Select this component when designing circuits requiring high efficiency in 48V automotive systems or general power management applications. The low RDS(ON) combined with low gate charge makes it suitable for minimizing both conduction and switching losses. Consider the TO263AB package dimensions and thermal dissipation capabilities relative to the expected load currents and ambient temperatures.
Part Context
This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs designed for high-current applications. The DMTH4002SCTB utilizes a D2PAK form factor to provide superior thermal performance compared to smaller packages. It is engineered to balance low static resistance with fast dynamic switching characteristics for modern power conversion topologies.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and thermal resistance specifications when substituting with other 40V N-channel MOSFETs in the D2PAK package.
