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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：69.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5220 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.83W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH4004LPSWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source breakdown voltage of 40V and supports continuous drain currents up to 100A at case temperatures of +25°C and +100°C. The device offers a maximum on-resistance of 2.5mΩ at VGS=10V and 5mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C and includes an exposed drain pad for thermal management.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation in high ambient temperature environments up to +175°C
- Manufactured in IATF 16949 certified facilities to meet specific change control requirements
- Includes 100% unclamped inductive switching (UIS) testing in production
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the complete part number including the suffix '-13' to confirm the specific tape and reel packaging quantity of 2,500 units. Ensure that the design environment meets the specified operating temperature range and thermal dissipation requirements outlined in the datasheet. Confirm compliance with RoHS and halogen-free directives if required by your manufacturing standards.
Selection Notes
Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low on-resistance characteristics help minimize power losses during conduction. Consider the gate charge specifications for switching speed requirements and ensure the PCB layout accommodates the exposed drain pad for optimal heat transfer to the copper plane.
Part Context
This device belongs to the DMTH4004 series of N-channel MOSFETs designed specifically for demanding automotive applications. It utilizes the PowerDI5060-8/SWP surface-mount package, which provides a compact footprint with enhanced thermal capabilities through its exposed drain pad construction.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, current handling, and package dimensions.
