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Product Detailed Parameters
- Description：MOSFET N-CH 40V 100A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：68.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4305 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.9W (Ta), 180W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH4004SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 100A at TC = +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 2.6mΩ at VGS = 10V and ID = 90A, with a maximum of 3.2mΩ. Total gate charge (Qg) is typically 68.6nC. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-252 package.
Feature Summary
- Engineered for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Rated for operation up to +175°C, making it suitable for high ambient temperature environments.
- Features 100% unclamped inductive switching testing to ensure robust end-application reliability.
- Qualified to AEC-Q101 standards for automotive-grade high reliability.
Applications
- Engine Management Systems
- Body Control Electronics
- DC/DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product specifications. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when designing circuits requiring low conduction losses and fast switching speeds within a 40V system. The TO-252 package provides a balance between thermal dissipation capabilities and surface mount footprint constraints. Consider the 175°C rating for designs operating in thermally challenging environments without excessive heatsinking.
Part Context
This part belongs to the DMTH4004 series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed specifically for automotive and industrial power management sectors. The device integrates an internal body diode and is optimized for synchronous rectification applications where low RDS(ON) is critical for overall system efficiency.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified cross-reference part numbers. Ensure any substitute maintains identical pinout configurations, voltage ratings, and thermal characteristics to prevent circuit modification.
FAQ
What is the maximum pulsed drain current capability?
The device supports a pulsed drain current (IDM) of 160A, measured with a 10µs pulse duration and a duty cycle of 1%.
Is the device qualified for automotive applications?
Yes, the DMTH4004SK3-13 is qualified to AEC-Q101 standards, indicating suitability for high-reliability automotive electronics.
What are the thermal resistance values?
The thermal resistance from junction to case (RθJC) is 0.8°C/W, while the junction to ambient resistance (RθJA) is 38°C/W under standard test conditions.
