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Product Detailed Parameters
- Description：MOSFET N-CH 40V 31A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：68.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4305 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH4004SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI5060-8 surface-mount packaging and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 185A at a case temperature of +25°C, with a maximum on-resistance of 2.7mΩ at VGS=10V. Total gate charge is typically 68.6nC. Thermal resistance from junction to case is 0.9°C/W, and the operating temperature range spans from -55°C to +175°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching testing for robust end applications
- Designed to minimize power losses through low on-state resistance
- Optimized for minimal switching losses via low total gate charge
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the required package variant matches the standard DMTH4004SPS datasheet rather than the automotive-compliant DMTH4004SPSQ specification. Ensure component authenticity through authorized distribution channels to guarantee compliance with RoHS and lead-free finish requirements.
Selection Notes
Select this component when designing circuits requiring a 40V N-channel MOSFET capable of handling high continuous currents in compact surface-mount layouts. The low thermal resistance facilitates efficient heat dissipation through the exposed drain pad. Consider the device's high avalanche energy rating if the application involves significant inductive load switching or transient voltage events.
Part Context
This part belongs to the DMTH series of high-performance silicon MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 footprint with other variants in the family but offers distinct electrical characteristics tailored for high-efficiency power management. The component represents a balance between low conduction losses and fast switching capabilities within a thermally optimized plastic molding compound.
Replacement Considerations
An automotive-compliant version exists under the separate part number DMTH4004SPSQ. Verify if the target application requires specific AEC-Q qualification standards before substituting the standard industrial grade DMTH4004SPS-13 with the automotive-grade alternative.
