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The DMTH4004SPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 2.7mΩ at VGS=10V. The device supports a continuous drain current of 185A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8 surface-mount footprint, it includes an exposed drain pad for thermal management.
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets the necessary automotive quality standards if used in regulated environments. Ensure the design accounts for the thermal resistance values provided in the datasheet under actual operating conditions.
Select this component when a low-voltage, high-current switch is required in space-constrained designs. The PowerDI5060-8 package offers a balance between current handling and board area. Consider the thermal environment carefully, as performance depends heavily on the PCB copper area connected to the exposed drain pad.
This part belongs to the DMTH4004 series from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic PowerDI package. The device is lead-free, RoHS compliant, and halogen/antimony free. It is manufactured in IATF 16949 certified facilities.
Consult the manufacturer's official substitution guide for verified equivalents. Cross-reference pinouts and electrical parameters such as RDS(ON) and Qg before implementation.