DMTH4005SPSW-13

$0.36

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:15654ad1c539 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：20.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3062 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH4005SPSW-13

Overview

The DMTH4005SPSW-13 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 40 V and a maximum on-resistance (R_DS(ON)) of 3.7 mΩ at V_GS = 10 V. The device supports continuous drain currents of 20.9 A at +25°C ambient temperature and up to 100 A at +25°C case temperature. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Engineered for high-efficiency power management by minimizing on-state resistance while maintaining superior switching performance.
Rated for operation in high ambient temperature environments with a maximum junction temperature of +175°C.
Features 100% unclamped inductive switching capability to ensure reliable and robust end applications.
Low gate charge characteristics minimize switching losses during operation.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel carrier configuration as documented in the official datasheet. Confirm that the required package variant matches the PowerDI5060-8/SWP (Type UX) specifications provided by the manufacturer. Ensure compliance with RoHS directives and halogen-free requirements if applicable to the design constraints.

Selection Notes

Select this component when designing circuits requiring low conduction losses and high thermal resilience in compact surface-mount layouts. Evaluate the thermal resistance parameters against the expected operating conditions to ensure the junction temperature remains within the specified limits. Consider the gate charge values for driver compatibility in high-frequency switching applications.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI®5060-8 package, which provides an exposed drain pad for efficient heat dissipation. The product line is designed to meet automotive reliability standards, with specific variants available for qualified automotive applications.

Replacement Considerations

An automotive-compliant version of this component is available under the separate part number DMTH4005SPSWQ. Verify pinout compatibility and electrical parameter alignment before substituting any alternative devices.