DMTH4007LPSW-13

$0.32

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fceb304ade7c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1895 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.7W (Ta), 83.3W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH4007LPSW-13

Overview

The DMTH4007LPSW-13 is a 40V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum on-resistance of 6.5mΩ at VGS=10V and 9.8mΩ at VGS=4.5V, supporting continuous drain currents of 85A at TC=25°C and 15A at TA=25°C. The device operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 2.7W at TA=25°C and 83.3W at TC=25°C.

Feature Summary

Rated for operation up to +175°C junction temperature
Includes 100% unclamped inductive switching capability
Features a thermally efficient package profile under 1.1mm

Applications

Notebook battery power management
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component matches the standard DMTH4007LPSW datasheet rather than the automotive-compliant DMTH4007LPSWQ variant. Ensure compliance with RoHS 3 and halogen-free requirements as specified in the manufacturer's documentation.

Selection Notes

Select this component for applications requiring low on-state losses and high conversion efficiency. The device is suitable for environments with high ambient temperatures due to its +175°C rating. Consider the thin package profile for space-constrained designs and verify thermal management requirements against the specified junction-to-ambient resistance values.

Part Context

This part belongs to Diodes Incorporated's new generation of N-channel enhancement mode MOSFETs designed to minimize RDS(ON) while maintaining superior switching performance. It utilizes a PowerDI5060-8/SWP (Type UX) molded plastic package with matte tin annealed terminals over a copper leadframe.

Replacement Considerations

An automotive-compliant version is available under the separate part number DMTH4007LPSWQ. Verify if AEC-Q101 qualification is required for the target application before selecting this standard industrial grade component.

FAQ

Is the DMTH4007LPSW-13 qualified for automotive applications?

No, this specific part number is not automotive qualified. An automotive-compliant alternative, DMTH4007LPSWQ, is available under a separate datasheet.